收藏本站
W9412G6JH
10.5 DC Characteristics
SYM.
PARAMETER
-4
MAX.
-5/-5I/-5K
-6/-6I
UNIT NOTES
Operating current: One Bank Active-Precharge;
I DD0
t RC = t RC min; t CK = t CK min;
DQ, DM and DQS inputs changing once per clock cycle;
60
55
50
7
Address and control inputs changing once every two clock cycles.
Operating current: One Bank Active-Read-Precharge;
I DD1
Burst = 4; t RC = t RC min; CL = 3; t CK = t CK min; I OUT = 0 mA;
75
65
55
7, 9
Address and control inputs changing once per clock cycle .
Precharge Power Down standby current:
I DD2P
All Banks Idle; Power down mode;
5
5
5
CKE ≤ V IL max; t CK = t CK min; Vin = V REF for DQ, DQS and DM .
Idle standby current:
I DD2N
CS ≥ V IH min; All Banks Idle; CKE ≥ V IH min; t CK = t CK min ;
Address and other control inputs changing once per clock cycle;
25
20
20
7
Vin ≥ V IH min or Vin ≤ V IL max for DQ, DQS and DM.
Active Power Down standby current:
I DD3P
One Bank Active; Power down mode;
CKE ≤ V IL max; t CK = t CK min ;
15
10
10
Vin = V REF for DQ, DQS and DM .
Active standby current:
CS ≥ V IH min; CKE ≥ V IH min; One Bank Active-Precharge;
mA
I DD3N
t RC = t RAS max; t CK = t CK min;
35
30
30
7
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle .
Operating current:
I DD4R
Burst = 2; Reads; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
140
120
110
7, 9
CL=2; t CK = t CK min; I OUT = 0mA.
Operating current:
Burst = 2; Write; Continuous burst; One Bank Active;
I DD4W
Address and control inputs changing once per clock cycle;
135
115
100
7
CL = 2; t CK = t CK min;
DQ, DM and DQS inputs changing twice per clock cycle.
I DD5
I DD6
Auto Refresh current: t RC = t RFC min.
Self Refresh current: CKE ≤ 0.2V ; external clock on; t CK = t CK
min.
75
2
70
2
65
2
7
Random Read current: 4 Banks Active Read with activate every
20nS, Auto-Precharge Read every 20 nS;
I DD7
Burst = 4; t RCD = 3; I OUT = 0mA;
170
150
130
DQ, DM and DQS inputs changing twice per clock cycle;
Address changing once per clock cycle.
Publication Release Date: Jan. 14, 2014
- 25 -
Revision: A04
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
W948D2FBJX5E IC LPDDR SDRAM 256MBIT 90VFBGA
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
相关代理商/技术参数
W9412G6JH-5TR 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N
W942 制造商:Performance Tool 功能描述:6 Piece Hook and Pick Set 制造商:PERFORMANCE TOOLS 功能描述:6 PC HOOK AND PICK SET
W942508BH 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM
W942508CH 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-5 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-6 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-7 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM
W942508CH-75 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM